? 2008 ixys corporation, all rights reserved ds99884a (4/08) v dss = 1200v i d25 = 30a r ds(on) 350 m t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c, r gs = 1m 1200 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c30a i dm t c = 25 c, pulse width limited by t jm 75 a i a t c = 25 c15a e as t c = 25 c2j dv/dt i s i dm , v dd v dss ,t j 150 c 20 v/ns p d t c = 25 c 890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g IXFN30N120P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1200 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 300 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 350 m g d s s minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. features ? international standard package ? encapsulating epoxy meets ul 94 v-0, flammability classification ? minibloc with aluminium nitride isolation ? fast recovery diode ? unclamped inductive switching (uis) rated ? low package inductance - easy to drive and to protect advantages ? easy to mount ? space savings ? high power density polar tm power mosfet hiperfet tm applications z high voltage switched-mode and resonant-mode power supplies z high voltage pulse power applications z high voltage discharge circuits in laser pulsers, spark igniters, rf generators z high voltage dc-dc converters z high voltage dc-ac inverters
ixys reserves the right to change limits, test conditions, and dimensions. IXFN30N120P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 13 22 s r gi gate input resistance 1.70 c iss 19 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 960 pf c rss 25 pf t d(on) resistive switching times 57 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 60 ns t d(off) r g = 1 (external) 95 ns t f 56 ns q g(on) 310 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 104 nc q gd 137 nc r thjc 0.14 c /w r thcs 0.05 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 30 a i sm repetitive, pulse width limited by t jm 120 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.6 c i rm 14 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 15a, -di/dt = 100a/ s v r = 100v sot-227b outline
? 2008 ixys corporation, all rights reserved IXFN30N120P fig. 1. output characteristics @ 25oc 0 3 6 9 12 15 18 21 24 27 30 012345678910 v ds - volts i d - amperes v gs = 10 v 7 v 8v 6v fig. 2. extended output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10 v 9 v 7v 6v 8 v fig. 3. output characteristics @ 125oc 0 3 6 9 12 15 18 21 24 27 30 0246810121416182022 v ds - volts i d - amperes v gs = 10 v 8 v 5 v 7 v 6v fig. 4. r ds(on) normalized to i d = 15a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10 v i d = 30 a i d = 15 a fig. 5. r ds(on) normalized to i d = 15a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 10203040506070 i d - amperes r ds(on) - normalized v gs = 10 v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFN30N120P ixys ref: f_30n120p(97) 4-01-08-c fig. 7. input admittance 0 5 10 15 20 25 30 4.5 5 5.5 6 6.5 7 7.5 8 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 0 2 4 6 8 1012141618202224262830 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 0.30.40.50.60.70.80.9 1 1.11.21.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v gs - volts v ds = 600v i d = 15a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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